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2ED21824S06JXUMA1, Gate Drivers LEVEL SHIFT SOI

Power\Power Management ICs\Gate DriversSilicon-on-Insulator (SOI) Gate Driver ICs Infineon Silicon-on-Insulator (SOI) Gate Driver ICs are level-shift high voltage gate driver ICs for IGBTs and MOSFETs. The SOI technology is a high-voltage, level-shift technology providing unique, measurable, and best-in-class advantages. These include integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that are causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.

Brand	Infineon Technologies
Factory Pack Quantity: Factory Pack Quantity	2500
Fall Time	15 ns
Logic Type	CMOS, LSTTL
Manufacturer	Infineon
Maximum Operating Temperature	+125 C
Maximum Turn-Off Delay Time	300 ns
Maximum Turn-On Delay Time	300 ns
Minimum Operating Temperature	-40 C
Moisture Sensitive	Yes
Mounting Style	SMD/SMT
Number of Drivers	1 Driver
Number of Outputs	1 Output
Operating Supply Current	550 uA
Output Current	2.5 A
Package/Case	DSO-14
Packaging	Reel, Cut Tape
Part # Aliases	2ED21824S06J SP003244528
Pd - Power Dissipation	1 W
Product Category	Gate Drivers
Product Type	Gate Drivers
Product	IGBT, MOSFET Gate Drivers
Propagation Delay - Max	300 ns
Rise Time	15 ns
Shutdown	Shutdown
Subcategory	PMIC-Power Management ICs
Supply Voltage - Max	20 V
Supply Voltage - Min	10 V
Technology	Si
Type	Half-Bridge
Fall Time	30ns
Package Type	DSO
Pin Count	14
Supply Voltage	20V
Вес, г	0.14