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Цена по запросу
2N7002-T1-GE3
Semiconductors\Discrete Semiconductors Описание Транзистор: N-MOSFET; полевой; 60В; 0,115А; Idm: 0,8А; 0,08Вт; D2PAK Характеристики
Категория
Транзистор
Тип
полевой
Вид
MOSFET
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
| Case | SOT23 |
| Drain current | 0.115A |
| Drain-source voltage | 60V |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | VISHAY |
| Mounting | SMD |
| On-state resistance | 13.5Ω |
| Polarisation | unipolar |
| Power dissipation | 80mW |
| Pulsed drain current | 0.8A |
| Type of transistor | N-MOSFET |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 0.115 |
| Maximum Drain Source Resistance (mOhm) | 7500@10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 200 |
| Minimum Operating Temperature (°C) | -55 |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | NRND |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| Typical Input Capacitance @ Vds (pF) | 22@25V |
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