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2N7002KDW-R1-00001
Semiconductors\Discrete Semiconductors
| Manufacturer | PANJIT |
| Brand | Panjit |
| Channel Mode | Enhancement |
| Factory Pack Quantity: Factory Pack Quantity | 3000 |
| Forward Transconductance - Min | 100 mS |
| Id - Continuous Drain Current | 115 mA |
| Manufacturer | Panjit |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | SOT-363-6 |
| Pd - Power Dissipation | 200 mW |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 800 pC |
| Rds On - Drain-Source Resistance | 3 Ohms |
| Series | NFET-035TS |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 40 ns |
| Typical Turn-On Delay Time | 20 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Continuous Drain Current (Id) | 115mA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 3Ω@10V, 500mA |
| Drain Source Voltage (Vdss) | 60V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Input Capacitance (Ciss@Vds) | 35pF@25V |
| Power Dissipation (Pd) | 200mW |
| Total Gate Charge (Qg@Vgs) | 800pC@4.5V |
| Type | 1PCSNChannel |
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