Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
11015, IRL520NSPBF / N-канал, D2PАK, 10А, 100В, шт
MOSFET, N-CH, 100V, 10A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Pow
| Current - Continuous Drain (Id) @ 25В°C | 10A(Tc) |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 25V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | TO-263-3, DВІPak(2 Leads+Tab), TO-263AB |
| Packaging | Tube |
| Part Status | Discontinued at Digi-Key |
| Power Dissipation (Max) | 3.8W(Ta), 48W(Tc) |
| Rds On (Max) @ Id, Vgs | 180 mOhm @ 6A, 10V |
| Series | HEXFETВ® |
| Supplier Device Package | D2PAK |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±16V |
| Vgs(th) (Max) @ Id | 2V @ 250ВµA |
| Вес, г | 2.5 |
