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1ED3321MC12NXUMA1, Gate Drivers Y
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1ED3321MC12NXUMA1, Gate Drivers Y

Power\Power Management ICs\Gate DriversExperience the Difference in Power Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ superjunction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on their individual design/system requirements from the currently broadest silicon-based SJ MOSFET portfolio in the industry. As one of the few manufacturers mastering all of the main three power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering consists of silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions, available to choose from, range from exceptional in price-performance through unrivaled in robustness to best-in-class devices. This enables customers to build the most efficient, environmentally friendliest, and most sustainable applications.
Brand Infineon Technologies
Configuration Inverting, Non-Inverting
Factory Pack Quantity 1000
Fall Time 370 ns
Logic Type CMOS
Manufacturer Infineon
Maximum Operating Temperature +125 C
Maximum Turn-Off Delay Time 92 ns
Maximum Turn-On Delay Time 84 ns
Minimum Operating Temperature -40 C
Moisture Sensitive Yes
Mounting Style SMD/SMT
Number of Drivers 1 Driver
Number of Outputs 1 Output
Operating Supply Current 1.1 mA
Output Current 8.5 A
Output Voltage 35 V
Package/Case DSO-16
Packaging Reel, Cut Tape
Part # Aliases 1ED3321MC12N SP005433357
Pd - Power Dissipation 810 mW
Product Category Gate Drivers
Product Type Gate Drivers
Product Isolated Gate Drivers
Propagation Delay - Max 15 ns
Rds On - Drain-Source Resistance 2.35 Ohms
Rise Time 530 ns
Shutdown Shutdown
Subcategory PMIC-Power Management ICs
Supply Voltage - Max 5.5 V
Supply Voltage - Min 2.5 V
Technology Si
Type High-Side

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