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1EDI20N12AF, Gate Drivers 1200V Isolated 1-CH, 3.5A,Separate Outpu
Power\Power Management ICs\Gate DriversEiceDRIVER™ Gate Driver ICs Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That"s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.
Brand | Infineon Technologies |
Configuration | Inverting, Non-Inverting |
Factory Pack Quantity | 2500 |
Fall Time | 9 ns |
Logic Type | CMOS |
Manufacturer | Infineon |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -40 C |
Moisture Sensitive | Yes |
Mounting Style | SMD/SMT |
Number of Drivers | 1 Driver |
Number of Outputs | 1 Output |
Output Current | 2 A |
Package/Case | SOIC-8 |
Part # Aliases | SP001222658 1EDI20N12AFXUMA1 |
Pd - Power Dissipation | 400 mW |
Product Category | Gate Drivers |
Product Type | Gate Drivers |
Product | MOSFET Gate Drivers |
Propagation Delay - Max | 143 ns |
Rise Time | 10 ns |
Shutdown | Shutdown |
Subcategory | PMIC-Power Management ICs |
Supply Voltage - Max | 17 V |
Supply Voltage - Min | 3.1 V |
Technology | Si |
Type | High-Side |
Height | 1.75 mm |
Length | 4.9 mm |
Package / Case | SOIC-8 |
Packaging | Reel |
Part # Aliases | 1EDI20N12AFXUMA1 SP001222658 |
RoHS | Details |
Series | 1EDI20 |
Tradename | EiceDRIVER |
Width | 3.9 mm |
Вес, г | 0.08 |