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Цена по запросу
2ED21064S06JXUMA1, Gate Drivers LEVEL SHIFT SOI
Power\Power Management ICs\Gate DriversSilicon-on-Insulator (SOI) Gate Driver ICs
Infineon Silicon-on-Insulator (SOI) Gate Driver ICs are level-shift high voltage gate driver ICs for IGBTs and MOSFETs. The SOI technology is a high-voltage, level-shift technology providing unique, measurable, and best-in-class advantages. These include integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that are causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.
| Brand | Infineon Technologies |
| Configuration | Inverting |
| Factory Pack Quantity: Factory Pack Quantity | 2500 |
| Fall Time | 35 ns |
| Logic Type | CMOS, LSTTL |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +125 C |
| Maximum Turn-Off Delay Time | 300 ns |
| Maximum Turn-On Delay Time | 300 ns |
| Minimum Operating Temperature | -40 C |
| Moisture Sensitive | Yes |
| Mounting Style | SMD/SMT |
| Number of Drivers | 2 Driver |
| Number of Outputs | 2 Output |
| Operating Supply Current | 300 uA |
| Output Current | 290 mA |
| Package/Case | DSO-14 |
| Packaging | Reel, Cut Tape |
| Part # Aliases | 2ED21064S06J SP001710052 |
| Pd - Power Dissipation | 1 W |
| Product Category | Gate Drivers |
| Product Type | Gate Drivers |
| Product | IGBT, MOSFET Gate Drivers |
| Propagation Delay - Max | 300 ns |
| Rise Time | 100 ns |
| Shutdown | Shutdown |
| Subcategory | PMIC-Power Management ICs |
| Supply Voltage - Max | 20 V |
| Supply Voltage - Min | 10 V |
| Technology | Si |
| Type | High-Side, Low-Side |
| IC Case / Package | SOIC |
| Задержка Выхода | 200нс |
| Задержка по Входу | 200нс |
| Количество Выводов | 14вывод(-ов) |
| Количество Каналов | 2канал(-ов) |
| Конфигурация Привода | Высокая Сторона и Низкая Сторона |
| Максимальная Рабочая Температура | 125°C |
| Максимальное Напряжение Питания | 20В |
| Минимальная Рабочая Температура | -40°C |
| Минимальное Напряжение Питания | 10В |
| Стиль Корпуса Привода | SOIC |
| Тип переключателя питания | IGBT, MOSFET |
| Ток истока | 290мА |
| Ток стока | 700мА |
| Уровень Чувствительности к Влажности (MSL) | MSL 3-168 часов |
| Fall Time | 100ns |
| Package Type | DSO |
| Pin Count | 14 |
| Supply Voltage | 10 → 20V |
| Вес, г | 0.14 |
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