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2ED2106S06FXUMA1
Электроэлемент650 V high-side and low-side gate driver with integrated bootstrap diode
| Fall Time | 80ns |
| Output Current | 290 mA |
| Package Type | DSO |
| Pin Count | 8 |
| Supply Voltage | 20V |
| Brand | Infineon Technologies |
| Configuration | Inverting |
| Factory Pack Quantity | 2500 |
| Fall Time | 35 ns |
| Logic Type | CMOS, LSTTL |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +125 C |
| Maximum Turn-Off Delay Time | 300 ns |
| Maximum Turn-On Delay Time | 300 ns |
| Minimum Operating Temperature | -40 C |
| Moisture Sensitive | Yes |
| Mounting Style | SMD/SMT |
| Number of Drivers | 2 Driver |
| Number of Outputs | 2 Output |
| Operating Supply Current | 300 uA |
| Package/Case | DSO-8 |
| Part # Aliases | 2ED2106S06F SP001710050 |
| Pd - Power Dissipation | 625 mW |
| Product Category | Gate Drivers |
| Product Type | Gate Drivers |
| Product | IGBT, MOSFET Gate Drivers |
| Propagation Delay - Max | 300 ns |
| Rise Time | 100 ns |
| Shutdown | Shutdown |
| Subcategory | PMIC-Power Management ICs |
| Supply Voltage - Max | 20 V |
| Supply Voltage - Min | 10 V |
| Technology | Si |
| Type | High-Side, Low-Side |
| Вес, г | 0.45 |
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