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2ED2184S06FXUMA1, Gate Drivers LEVEL SHIFT SOI

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2ED2184S06FXUMA1, Gate Drivers LEVEL SHIFT SOI

Power\Power Management ICs\Gate Drivers2ED218x High-Current 650V Half-Bridge Gate Drivers Infineon Technologies 2ED218x High-Current 650V Half-Bridge Gate Drivers feature silicon-on-insulator (SOI) technology and an integrated bootstrap diode (BSD) in a DSO-8 or DSO-14 package. The series combines high current with high speed to drive MOSFETs and IGBTs with typical 2.5A sink and source current. The high-voltage, level-shift SOI technology provides robustness to protect against negative transient voltage spikes and lowers level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits. Infineon Technologies 2ED218x High-Current 650V Half-Bridge Gate Drivers offer ruggedness and noise immunity against negative transient voltages on the VS pin.

Brand	Infineon Technologies
Factory Pack Quantity	2500
Fall Time	15 ns
Logic Type	CMOS, LSTTL
Manufacturer	Infineon
Maximum Operating Temperature	+125 C
Maximum Turn-Off Delay Time	300 ns
Maximum Turn-On Delay Time	840 ns
Minimum Operating Temperature	-40 C
Moisture Sensitive	Yes
Mounting Style	SMD/SMT
Number of Drivers	1 Driver
Number of Outputs	1 Output
Operating Supply Current	550 uA
Output Current	2.5 A
Package/Case	DSO-8
Part # Aliases	2ED2184S06F SP001710046
Pd - Power Dissipation	625 mW
Product Category	Gate Drivers
Product Type	Gate Drivers
Product	IGBT, MOSFET Gate Drivers
Propagation Delay - Max	840 ns
Rise Time	15 ns
Shutdown	Shutdown
Subcategory	PMIC-Power Management ICs
Supply Voltage - Max	20 V
Supply Voltage - Min	10 V
Technology	Si
Type	Half-Bridge
Fall Time	15ns
Package Type	DSO
Supply Voltage	10 → 20V