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Цена по запросу
2N7000, Транзистор полевой MOSFET N-канальный 60В 350мА
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторыТранзистор полевой MOSFET N-канальный 60В 350мА
| Корпус | TO92-3 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 200 mA |
| Maximum Drain Source Resistance | 5 Ω |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 400 mW |
| Minimum Gate Threshold Voltage | 0.8V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-92 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Width | 4.19mm |
| Configuration | Single |
| Continuous Drain Current (Id) | 200 mA |
| Drain-Source Voltage (Vds) | 60 V |
| Gate-Source Voltage | 20 V |
| ON Resistance (Rds(on)) | 5.3 Ohm |
| Operating Temperature Max. | 150 °C |
| Operating Temperature Min. | -55 °C |
| Packaging | Bulk |
| Pins | 3 |
| Power Dissipation (Pd) | 400 mW |
| Reflow Temperature Max. | 300 °C |
| Transistor Polarity | N-Channel |
| Turn-OFF Delay Time | 10 ns |
| Turn-ON Delay Time | 10 ns |
| Вес, г | 0.209 |
