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2N7002A-7, Транзистор полевой MOSFET N-канальный 60В 0.22A

Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторыТранзистор полевой MOSFET N-канальный 60В 0.22A

Корпус	SOT23-3
Continuous Drain Current (Id) @ 25В°C	180mA
Power Dissipation-Max (Ta=25В°C)	370mW
Rds On - Drain-Source Resistance	6О© @ 115mA,5V
Transistor Polarity	N Channel
Vds - Drain-Source Breakdown Voltage	60V
Vgs - Gate-Source Voltage	2V @ 250uA
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	220 mA
Maximum Drain Source Resistance	5 Ω
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	2V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	540 mW
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Width	1.4mm
Brand	Diodes Incorporated
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	3000
Forward Transconductance - Min	80 mS
Id - Continuous Drain Current	220 mA
Manufacturer	Diodes Incorporated
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	SOT-23-3
Pd - Power Dissipation	540 mW
Product Category	MOSFET
Product Type	MOSFET
Product	MOSFET Small Signal
Rds On - Drain-Source Resistance	6 Ohms
Series	2N7002
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	33 ns
Typical Turn-On Delay Time	10 ns
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1.2 V
Вес, г	0.002