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2N7002E-7-F, Транзистор полевой MOSFET N-канальный 60В 250мА
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторыТранзистор полевой MOSFET N-канальный 60В 250мА
| Корпус | SOT23-3 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 300 mA |
| Maximum Drain Source Resistance | 4 Ω |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -40 V, +40 V |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 540 mW |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 0.223 nC @ 4.5 V |
| Width | 1.4mm |
| Brand | Diodes Incorporated |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 3000 |
| Forward Transconductance - Min | 80 mS |
| Id - Continuous Drain Current | 300 mA |
| Manufacturer | Diodes Incorporated |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Pd - Power Dissipation | 540 mW |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Product | MOSFET Small Signal |
| Qg - Gate Charge | 223 pC |
| Rds On - Drain-Source Resistance | 3 Ohms |
| Series | 2N7002E |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 11 ns |
| Typical Turn-On Delay Time | 7 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Case | SOT23 |
| Drain current | 0.2A |
| Drain-source voltage | 60V |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | DIODES INCORPORATED |
| Mounting | SMD |
| On-state resistance | 4Ω |
| Polarisation | unipolar |
| Power dissipation | 0.37W |
| Type of transistor | N-MOSFET |
| Continuous Drain Current (Id) | 250mA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 3Ω@10V, 250mA |
| Drain Source Voltage (Vdss) | 60V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Input Capacitance (Ciss@Vds) | 50pF@25V |
| Power Dissipation (Pd) | 370mW |
| Total Gate Charge (Qg@Vgs) | 220pC@4.5V |
| Type | 1PCSNChannel |
| Вес, г | 0.02 |
