Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
2SA1943N(S1,E,S)
Semiconductors\Discrete SemiconductorsTrans GP BJT PNP 230V 15A 3-Pin TO-3P(N) - Rail/Tube (Alt: 2SA1943N(S1,E,S))
| Maximum Collector Base Voltage | -230 V |
| Maximum Collector Emitter Voltage | -230 V |
| Maximum DC Collector Current | -15 A |
| Maximum Emitter Base Voltage | -5 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 150 W |
| Minimum DC Current Gain | 55 |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-3P |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 15A |
| Current - Collector Cutoff (Max) | 5ВµA(ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A, 5V |
| Frequency - Transition | 30MHz |
| Manufacturer | Toshiba Semiconductor and Storage |
| Operating Temperature | 150В°C(TJ) |
| Package / Case | TO-3P-3, SC-65-3 |
| Packaging | Tube |
| Part Status | Active |
| Power - Max | 150W |
| Supplier Device Package | TO-3P(N) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
| Voltage - Collector Emitter Breakdown (Max) | 230V |
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