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2SB1386T100R, Bipolar Transistors - BJT PNP 20V 5A

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT20V 2W 180@500mA,2V 5A PNP SOT-89 Bipolar Transistors - BJT ROHS

Brand	ROHM Semiconductor
Collector- Base Voltage VCBO	30 V
Collector- Emitter Voltage VCEO Max	20 V
Collector-Emitter Saturation Voltage	350 mV
Configuration	Single
Continuous Collector Current	-5 A
DC Collector/Base Gain hFE Min	82
DC Current Gain hFE Max	390
Emitter- Base Voltage VEBO	6 V
Factory Pack Quantity	1000
Gain Bandwidth Product fT	120 MHz
Manufacturer	ROHM Semiconductor
Maximum DC Collector Current	5 A
Maximum Operating Temperature	+150 C
Mounting Style	SMD/SMT
Pd - Power Dissipation	2 W
Product Category	Bipolar Transistors-BJT
Product Type	BJTs-Bipolar Transistors
Subcategory	Transistors
Technology	Si
Transistor Polarity	PNP
Collector-Emitter Breakdown Voltage	20V
Maximum DC Collector Current	5A
Pd - Power Dissipation	2W
Transistor Type	PNP
Collector Current (Ic)	5A
Collector Cut-Off Current (Icbo)	500nA
Collector-Emitter Breakdown Voltage (Vceo)	20V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)	350mV@4A, 100mA
DC Current Gain (hFE@Ic,Vce)	180@500mA, 2V
Operating Temperature	-
Power Dissipation (Pd)	2W
Transition Frequency (fT)	120MHz
Collector Emitter Voltage Max	20В
Continuous Collector Current	4А
DC Current Gain hFE Min	82hFE
Power Dissipation	500мВт
Количество Выводов	3вывод(-ов)
Максимальная Рабочая Температура	150°C
Монтаж транзистора	Surface Mount
Полярность Транзистора	PNP
Стиль Корпуса Транзистора	SOT-89
Уровень Чувствительности к Влажности (MSL)	MSL 1-Безлимитный
Частота Перехода ft	120МГц
кол-во в упаковке	1
корпус	SOT89
Вес, г	0.13