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2SC3326-A,LF, Transistor for Low Freq. Amplification

Semiconductors\Discrete SemiconductorsБиполярный (BJT) транзистор NPN 20V 300mA 30MHz 150mW Surface Mount TO-236

Base Product Number	HN2D02 ->
Current - Collector (Ic) (Max)	300mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 4mA, 2V
ECCN	EAR99
Frequency - Transition	30MHz
HTSUS	8541.21.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	125В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-236-3, SC-59, SOT-23-3
Power - Max	150mW
RoHS Status	RoHS Compliant
Supplier Device Package	TO-236
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	100mV @ 3mA, 30mA
Voltage - Collector Emitter Breakdown (Max)	20V
Brand	Toshiba
Collector- Base Voltage VCBO	50 V
Collector- Emitter Voltage VCEO Max	20 V
Collector-Emitter Saturation Voltage	42 mV
Configuration	Single
DC Collector/Base Gain hFE Min	200
DC Current Gain hFE Max	1200
Emitter- Base Voltage VEBO	25 V
Factory Pack Quantity: Factory Pack Quantity	3000
Gain Bandwidth Product fT	30 MHz
Manufacturer	Toshiba
Maximum DC Collector Current	300 mA
Maximum Operating Temperature	+125 C
Mounting Style	SMD/SMT
Package/Case	TO-236-3
Pd - Power Dissipation	150 mW
Product Category	Bipolar Transistors-BJT
Product Type	BJTs-Bipolar Transistors
Qualification	AEC-Q101
Series	2SC3326
Subcategory	Transistors
Technology	Si
Transistor Polarity	NPN