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2SK208-R[TE85L.F]

Транзисторы и сборки MOSFETA range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Корпус	to236
кол-во в упаковке	1
Brand	Toshiba
Configuration	Single
Drain-Source Current at Vgs=0	0.3 mA
Factory Pack Quantity	3000
Gate-Source Cutoff Voltage	-5 V
Id - Continuous Drain Current	6.5 mA
Manufacturer	Toshiba
Mounting Style	SMD/SMT
Package / Case	SC-59-3
Packaging	Reel
Pd - Power Dissipation	100 mW
Product Category	JFET
RoHS	Details
Series	2SK208
Transistor Polarity	N-Channel
Unit Weight	0.000282 oz
Vds - Drain-Source Breakdown Voltage	10 V
Vgs - Gate-Source Breakdown Voltage	-30 V
Channel Type	N
Idss Drain-Source Cut-off Current	0.3 to 0.75mA
Maximum Drain Gate Voltage	-50V
Maximum Drain Source Voltage	10 V
Maximum Gate Source Voltage	-30 V
Maximum Operating Temperature	+125 °C
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Package Type	SOT-346(SC-59)
Pin Count	3
Transistor Configuration	Single
Width	1.5mm
Вес, г	0.04