Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
34313, IRF7401PBF / N-канал, SO-8, 8.7А, 20В, шт
MOSFET, N-CH, 20V, 8.7A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:8.7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:HEXFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current - (A) | 8.7 |
| Maximum Drain Source Resistance - (mOhm) | 22@4.5V |
| Maximum Drain Source Voltage - (V) | 20 |
| Maximum Gate Source Voltage - (V) | ??12 |
| Maximum Gate Threshold Voltage - (V) | 0.7(Min) |
| Maximum Power Dissipation - (mW) | 2500 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~150 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Process Technology | HEXFET |
| Standard Package Name | SOP |
| Supplier Package | SOIC |
| Typical Gate Charge @ Vgs - (nC) | 48(Max)@4.5V |
| Typical Input Capacitance @ Vds - (pF) | 1600@15V |
| Typical Output Capacitance - (pF) | 690 |
| Вес, г | 0.164 |
