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AFGB40T65SQDN IGBT, 80 A 650 V, 3-Pin D2PAK, Surface Mount
Semiconductors\Discrete Semiconductors\IGBTsUsing the novel field stop 4th generation IGBT technology. AFGB40T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Energy Rating | 22.3mJ |
| Gate Capacitance | 2495pF |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Continuous Collector Current | 80 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 238 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Transistors | 1 |
| Package Type | D2PAK |
| Pin Count | 3 |
| Transistor Configuration | Single |
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