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AIKW50N60CTXKSA1 IGBT, 80 A 600 V, 3-Pin PG-TO263-3

Semiconductors\Discrete Semiconductors\IGBTsПолевой упор для траншеи IGBT, 600 В, 80 А, 333 Вт, сквозное отверстие PG-TO247-3-41

Base Product Number	AIKW50 ->
Current - Collector (Ic) (Max)	80A
Current - Collector Pulsed (Icm)	150A
ECCN	EAR99
Gate Charge	310nC
HTSUS	8541.29.0095
IGBT Type	Trench Field Stop
Input Type	Standard
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-40В°C ~ 175В°C (TJ)
Package	Tube
Package / Case	TO-247-3
Power - Max	333W
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Series	Automotive, AEC-Q101, TrenchStopв„ў ->
Supplier Device Package	PG-TO247-3-41
Switching Energy	1.2mJ (on), 1.4mJ (off)
Td (on/off) @ 25В°C	26ns/299ns
Test Condition	400V, 50A, 7Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 50A
Voltage - Collector Emitter Breakdown (Max)	600V
Brand	Infineon Technologies
Collector- Emitter Voltage VCEO Max	600 V
Collector-Emitter Saturation Voltage	1.5 V
Configuration	Single
Continuous Collector Current at 25 C	80 A
Factory Pack Quantity	240
Manufacturer	Infineon
Maximum Gate Emitter Voltage	-20 V, 20 V
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-40 C
Mounting Style	Through Hole
Packaging	Tube
Part # Aliases	AIKW50N60CT SP001346772
Pd - Power Dissipation	333 W
Product Category	IGBT Transistors
Product Type	IGBT Transistors
Subcategory	IGBTs
Technology	Si
Maximum Collector Emitter Voltage	600 V
Maximum Continuous Collector Current	80 A
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	250 W
Package Type	PG-TO263-3
Pin Count	3