Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
AIKW75N60CTXKSA1 IGBT, 80 A 600 V, 3-Pin PG-TO247-3
Semiconductors\Discrete Semiconductors\IGBTsThe Infineon insulated-gate bipolar transistor with positive temperature coefficient in saturation voltage.
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Continuous Collector Current | 80 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 428 W |
| Package Type | PG-TO247-3 |
| Pin Count | 3 |
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Collector-Emitter Saturation Voltage | 1.5 V |
| Configuration | Single |
| Continuous Collector Current at 25 C | 80 A |
| Factory Pack Quantity | 240 |
| Manufacturer | Infineon |
| Maximum Gate Emitter Voltage | -20 V, 20 V |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Through Hole |
| Packaging | Tube |
| Part # Aliases | AIKW75N60CT SP001346756 |
| Pd - Power Dissipation | 428 W |
| Product Category | IGBT Transistors |
| Product Type | IGBT Transistors |
| Subcategory | IGBTs |
| Technology | Si |
| Вес, г | 1 |
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