Как мы работаем

По сертификату
"военный регистр"

Только с Юр. Лицами,
мелкий и крупный опт

Цена по запросу

Заказать в 1 клик

APT75GP120JDQ3, IGBT Modules IGBT PT MOS 7 Combi 1200 V 75 A SOT-227

Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules

Brand	Microchip Technology
Collector- Emitter Voltage VCEO Max	1.2 kV
Collector-Emitter Saturation Voltage	3.3 V
Configuration	Single
Continuous Collector Current at 25 C	128 A
Factory Pack Quantity	1
Gate-Emitter Leakage Current	100 nA
Manufacturer	Microchip
Maximum Gate Emitter Voltage	20 V
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Screw Mount
Operating Temperature Range	-55 C to+150 C
Package / Case	SOT-227-4
Packaging	Tube
Pd - Power Dissipation	543 W
Product Category	IGBT Modules
Product Type	IGBT Modules
Product	IGBT Modules
Subcategory	IGBTs
Technology	Si
Вес, г	31