Цена по запросу
APT75GT120JU3, IGBT Modules PM-IGBT-TFS-SOT227
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
| Brand | Microchip Technology |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Collector-Emitter Saturation Voltage | 1.7 V |
| Configuration | Single |
| Continuous Collector Current at 25 C | 100 A |
| Factory Pack Quantity: Factory Pack Quantity | 1 |
| Gate-Emitter Leakage Current | 500 nA |
| Manufacturer | Microchip |
| Maximum Gate Emitter Voltage | 20 V |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Chassis Mount |
| Operating Temperature Range | -55 C to+150 C |
| Package/Case | SOT-227-4 |
| Packaging | Tube |
| Pd - Power Dissipation | 416 W |
| Product Category | IGBT Modules |
| Product Type | IGBT Modules |
| Product | IGBT Silicon Modules |
| Subcategory | IGBTs |
| Technology | Si |
| Tradename | ISOTOP |
| Application | motors |
| Case | SOT227B |
| Collector current | 75A |
| Electrical mounting | screw |
| Gate-emitter voltage | ±20V |
| Manufacturer | MICROCHIP(MICROSEMI) |
| Max. off-state voltage | 1.2kV |
| Mechanical mounting | screw |
| Pulsed collector current | 175A |
| Semiconductor structure | diode/transistor |
| Technology | Field Stop, Trench |
| Topology | buck chopper |
| Type of module | IGBT |
| Вес, г | 30 |
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