Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
APTGLQ25H120T1G, IGBT Modules PM-IGBT-TFS-SP1
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
| Brand | Microchip Technology |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Collector-Emitter Saturation Voltage | 2.05 V |
| Configuration | Quad |
| Continuous Collector Current at 25 C | 50 A |
| Factory Pack Quantity: Factory Pack Quantity | 1 |
| Gate-Emitter Leakage Current | 150 nA |
| Manufacturer | Microchip |
| Maximum Gate Emitter Voltage | 20 V |
| Maximum Operating Temperature | +125 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Chassis Mount |
| Package / Case | SP1 |
| Packaging | Tube |
| Pd - Power Dissipation | 165 W |
| Product Category | IGBT Modules |
| Product Type | IGBT Modules |
| Product | IGBT Silicon Modules |
| Subcategory | IGBTs |
| Technology | Si |
| Вес, г | 80 |
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