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AS6C1008-55TIN, (128K x 8, 2.7-5.5V, Ind), память SRAM 128K x 8, 3.3В, -40...+85C

Микросхемы / Микросхемы памяти / Статическая память - SRAMпамять SRAM 128K x 8, 3.3В, -40...+85C

Корпус	tsop32
Access Time	55ns
ECCN	EAR99
HTSUS	8542.32.0041
Memory Format	SRAM
Memory Interface	Parallel
Memory Size	1Mb (128K x 8)
Memory Type	Volatile
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Mounting Type	Surface Mount
Operating Temperature	-40В°C ~ 85В°C (TA)
Package	Tray
Package / Case	32-TFSOP (0.724"", 18.40mm Width)
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	32-TSOP I
Technology	SRAM - Asynchronous
Voltage - Supply	2.7V ~ 5.5V
Write Cycle Time - Word, Page	55ns
Address Bus Width	17bit
Low Power	Yes
Maximum Operating Supply Voltage	5.5 V
Maximum Operating Temperature	+85 °C
Maximum Random Access Time	55ns
Minimum Operating Supply Voltage	2.7 V
Minimum Operating Temperature	-40 °C
Number of Bits per Word	8bit
Number of Words	128k
Organisation	128k x 8 bit
Package Type	TSOP
Pin Count	32
Timing Type	Asynchronous
Width	18.4mm
Brand	Alliance Memory
Factory Pack Quantity	156
Interface Type	Parallel
Manufacturer	Alliance Memory
Mounting Style	SMD/SMT
Operating Temperature Range	-40 C to+85 C
Organization	128 k x 8
Packaging	Tray
Product Category	SRAM
RoHS	Details
Series	AS6C1008
Supply Current - Max	60 mA
Supply Voltage - Max	5.5 V
Supply Voltage - Min	2.7 V
Type	Asynchronous
Access Time	55 ns
Factory Pack Quantity: Factory Pack Quantity	156
Maximum Operating Temperature	+85 C
Memory Size	1 Mbit
Memory Type	SDR
Minimum Operating Temperature	-40 C
Moisture Sensitive	Yes
Package / Case	TSOP-32
Product Type	SRAM
Subcategory	Memory & Data Storage
Вес, г	1.6