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AS6C4008-55ZIN
Электроэлемент Описание IC: SRAM memory; 512kx8bit; 2.7?5V; 55ns; TSOP32 II; parallel Характеристики
Категория
Микросхема
Тип
памяти
Вид
SRAM
| Категория | Микросхема |
| Тип | памяти |
| Вид | SRAM |
| Access Time | 55 ns |
| Brand | Alliance Memory |
| Factory Pack Quantity | 117 |
| Interface Type | Parallel |
| Manufacturer | Alliance Memory |
| Maximum Operating Temperature | +85 C |
| Memory Size | 4 Mbit |
| Memory Type | SDR |
| Minimum Operating Temperature | -40 C |
| Mounting Style | SMD/SMT |
| Operating Temperature Range | -40 C to+85 C |
| Organization | 512 k x 8 |
| Package / Case | TSOP II-32 |
| Packaging | Tray |
| Product Category | SRAM |
| RoHS | Details |
| Series | AS6C4008 |
| Supply Current - Max | 60 mA |
| Supply Voltage - Max | 5.5 V |
| Supply Voltage - Min | 2.7 V |
| Type | Asynchronous |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40В°C ~ 85В°C (TA) |
| Package | Tray |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | 32-TSOP II |
| Technology | SRAM - Asynchronous |
| Voltage - Supply | 2.7V ~ 5.5V |
| Write Cycle Time - Word, Page | 55ns |
| Factory Pack Quantity: Factory Pack Quantity | 117 |
| Moisture Sensitive | Yes |
| Product Type | SRAM |
| Subcategory | Memory & Data Storage |
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