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AS6C4016-55ZIN

Электроэлемент Описание IC: SRAM memory; 256kx16bit; 2.7?5.5V; 55ns; TSOP44 II; parallel Характеристики Категория Микросхема Тип памяти Вид SRAM

Категория	Микросхема
Тип	памяти
Вид	SRAM
Access Time	55 ns
Brand	Alliance Memory
Factory Pack Quantity	135
Interface Type	Parallel
Manufacturer	Alliance Memory
Maximum Operating Temperature	+85 C
Memory Size	4 Mbit
Memory Type	SDR
Minimum Operating Temperature	-40 C
Mounting Style	SMD/SMT
Operating Temperature Range	-40 C to+85 C
Organization	256 k x 16
Package / Case	TSOP II-44
Packaging	Tray
Product Category	SRAM
RoHS	Details
Series	AS6C4016
Supply Current - Max	60 mA
Supply Voltage - Max	5.5 V
Supply Voltage - Min	2.7 V
Type	Asynchronous
ECCN	3A991B2A
HTSUS	8542.32.0041
Memory Format	SRAM
Memory Interface	Parallel
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Mounting Type	Surface Mount
Operating Temperature	-40В°C ~ 85В°C (TA)
Package	Tray
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	44-TSOP II
Technology	SRAM - Asynchronous
Voltage - Supply	2.7V ~ 5.5V
Write Cycle Time - Word, Page	55ns
Address Bus Width	18bit
Low Power	Yes
Maximum Operating Supply Voltage	5.5 V
Maximum Random Access Time	55ns
Minimum Operating Supply Voltage	2.7 V
Number of Bits per Word	16bit
Number of Words	256k
Organisation	256k x 16 bit
Package Type	TSOP
Pin Count	44
Timing Type	Asynchronous
Width	10.3mm
Case	TSOP44 II
IC width	400mils
Integrated circuit features	LPC
Kind of interface	parallel
Kind of memory	asynchronous, SRAM
Memory	4Mb SRAM
Memory organisation	256kx16bit
Mounting	SMD
Operating voltage	2.7…5.5V
Type of integrated circuit	SRAM memory
Вес, г	4.571