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AUIRF7669L2TR, MOSFETs 100V AUTO GRADE 1 N-CH HEXFET
Unclassified Автомобильные МОП-транзисторы с N-каналом от 75 В до 100 В
Infineon Technologies Автомобильные МОП-транзисторы с N-каналом от 75 В до 100 В сертифицированы по стандарту AEC-Q101 для автомобильных приложений и доступны в широком диапазоне типов корпусов, включая D- PAK, TOLL (HSOF-8), TOLG (HSOG-8) и SSO8 (TDSON-8). Эти полевые МОП-транзисторы идеально подходят для систем впрыска топлива, приложений беспроводной зарядки в автомобиле и подсистемы питания 48 В, снижающей выбросы CO 2, известной как Board Net.
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 4000 |
| Fall Time | 14 ns |
| Forward Transconductance - Min | 90 S |
| Id - Continuous Drain Current | 114 A |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | DirectFET-L8 |
| Pd - Power Dissipation | 100 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 120 nC |
| Qualification | AEC-Q101 |
| Rds On - Drain-Source Resistance | 3.5 mOhms |
| Rise Time | 30 ns |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 27 ns |
| Typical Turn-On Delay Time | 15 ns |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Automotive | Yes |
| Channel Type | N |
| Configuration | Single Octal Source Dual Drain |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | No Lead |
| Material | Si |
| Maximum Continuous Drain Current (A) | 19 |
| Maximum Drain Source Resistance (mOhm) | 4.4@10V |
| Maximum Drain Source Voltage (V) | 100 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Maximum IDSS (uA) | 5 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 3300 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 15 |
| Pin Count | 15 |
| PPAP | Unknown |
| Process Technology | DirectFET |
| Product Category | Power MOSFET |
| Supplier Package | Direct-FET L8 |
| Supplier Temperature Grade | Automotive |
| Typical Fall Time (ns) | 14 |
| Typical Gate Charge @ 10V (nC) | 81 |
| Typical Gate Charge @ Vgs (nC) | 81@10V |
| Typical Input Capacitance @ Vds (pF) | 5660@25V |
| Typical Rise Time (ns) | 30 |
| Typical Turn-Off Delay Time (ns) | 27 |
| Typical Turn-On Delay Time (ns) | 15 |
| Вес, г | 0.18 |
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