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AUIRS2191STR, Gate Drivers Auto High Low Side 600V 10-20 25ns
Power\Power Management ICs\Gate DriversEiceDRIVER™ Gate Driver ICs Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.
Brand | Infineon Technologies |
Factory Pack Quantity | 2500 |
Fall Time | 60 ns |
Features | Independent |
Logic Type | CMOS |
Manufacturer | Infineon |
Maximum Operating Temperature | +125 C |
Maximum Turn-Off Delay Time | 175 ns |
Maximum Turn-On Delay Time | 175 ns |
Minimum Operating Temperature | -40 C |
Moisture Sensitive | Yes |
Mounting Style | SMD/SMT |
Number of Drivers | 2 Driver |
Number of Outputs | 2 Output |
Operating Supply Current | 150 uA |
Output Current | 3.5 A |
Output Voltage | 10 V to 20 V |
Package/Case | SOIC-Narrow-16 |
Pd - Power Dissipation | 1 W |
Product Category | Gate Drivers |
Product Type | Gate Drivers |
Product | IGBT, MOSFET Gate Drivers |
Propagation Delay - Max | 175 ns |
Qualification | AEC-Q100 |
Rise Time | 60 ns |
Subcategory | PMIC-Power Management ICs |
Supply Voltage - Max | 20 V |
Supply Voltage - Min | 10 V |
Technology | Si |
Type | High-Side, Low-Side |
Driven Configuration | Half Bridge |
Fall Time | 15ns |
Load Type | IGBT;MOSFET |
Number of Drivers | 2 |
Operating Temperature | -40℃~+150℃@(Tj) |
Peak Output Current(sink) | 3.5A |
Peak Output Current(source) | 3.5A |
Rise Time | 15ns |
Supply Voltage | 10V~20V |
Вес, г | 0.14 |
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Цена по запросу