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Цена по запросу
BAV102,115, Диод: импульсный, SMD, 200В, 250мА, 50нс, SOD80, Ufmax: 1,25В, 400мВт
Diodes\Switching DiodesSupports customised high density circuit designs Low-leakage and high-voltage types available High switching speeds
| Diode Configuration | Independent Type |
| Forward Voltage (Vf@If) | 1.25V@200mA |
| Rectified Current | 200mA |
| Reverse Leakage Current | 100nA@150V |
| Reverse Recovery Time (trr) | 50ns |
| Reverse Voltage (Vr) | 150V |
| кол-во в упаковке | 2500 |
| Diode Technology | Silicon Junction |
| Diode Type | Rectifier |
| Maximum Continuous Forward Current | 250mA |
| Maximum Forward Voltage Drop | 1.25V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | MiniMELF |
| Peak Non-Repetitive Forward Surge Current | 9A |
| Peak Reverse Recovery Time | 50ns |
| Peak Reverse Repetitive Voltage | 200V |
| Pin Count | 2 |
| Rectifier Type | General Purpose |
| Capacitance @ Vr, F | 5pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 250mA(DC) |
| Current - Reverse Leakage @ Vr | 100nA @ 150V |
| Family | Diodes-Rectifiers-Single |
| Manufacturer | NXP Semiconductors |
| Operating Temperature - Junction | 175°C(Max) |
| Package / Case | DO-213AC, MINI-MELF, SOD-80 |
| Packaging | Tape & Reel(TR) |
| Part Status | Active |
| Speed | Fast Recovery = 200mA(Io) |
| Standard Package | 2.5 |
| Supplier Device Package | LLDS; MiniMelf |
| Voltage - DC Reverse (Vr) (Max) | 150V |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 200mA |
| Вес, г | 0.05 |
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