Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт

Цена по запросу
BIDW30N60T Single Diode IGBT, 30 A 600 V TO-247
Semiconductors\Discrete Semiconductors\IGBTsThe Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications.
Configuration | Single Diode |
Maximum Collector Emitter Voltage | 600 V |
Maximum Continuous Collector Current | 30 A |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 230 W |
Number of Transistors | 1 |
Package Type | TO-247 |