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BPW 34 S-Z, Фотодиод, 60°, 2нА, 850нм, SMD-2
Оптоэлектроника и Дисплеи\Фотодиоды\Фотодиоды без Усиления
The BPW34S is a SMT silicon PIN Photodiode with high density package. It especially suitable for application from 400nm to 110nm wavelength and 60° of half angle.
• Suitable for Reflow Soldering
• 20ns Typical Short Switching Time
• DIL Plastic Package with High Packing Density
• 2.65 x 2.65mm² Radiant Sensitive Area
• 80µA Photocurrent
| Длина Волны Предельной Чувствительности | 850нм |
| Количество Выводов | 2вывод(-ов) |
| Линейка Продукции | BPW34, BPW34S, BPW34S(R18R) |
| Максимальная Рабочая Температура | 100 C |
| Минимальная Рабочая Температура | -40 C |
| Стиль Корпуса Диода | SMD |
| Темновой Ток | 2000пА |
| Угол Приема ± | 60 |
| Уровень Чувствительности к Влажности (MSL) | MSL 4-72 часа |
| Amplifier Function | No |
| Diode Material | Si |
| Maximum Wavelength Detected | 1100nm |
| Minimum Wavelength Detected | 400nm |
| Mounting Type | Surface Mount |
| Number of Pins | 2 |
| Package Type | Smart DIL |
| Polarity | Positive |
| Short Circuit Current | 80µA |
| Spectrums Detected | Infrared |
| Typical Fall Time | 0.02µs |
| Typical Rise Time | 0.02µs |
| Wavelength of Peak Sensitivity | 850nm |
| Width | 3.7mm |
| Automotive | Unknown |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Maximum Dark Current (nA) | 30 |
| Maximum Fall Time (ns) | 20 |
| Maximum Forward Voltage (V) | 1.3 |
| Maximum Light Current (uA) | 80 |
| Maximum Operating Temperature (°C) | 100 |
| Maximum Power Dissipation (mW) | 150 |
| Maximum Reverse Voltage (V) | 32 |
| Maximum Rise Time (ns) | 20 |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Surface Mount |
| Part Status | Active |
| PCB changed | 2 |
| Peak Wavelength (nm) | 850 |
| Photo Sensitivity | 0.62A/W |
| Photodiode Material | Si |
| Photodiode Type | PIN |
| Pin Count | 2 |
| PPAP | Unknown |
| Supplier Package | DIL SMT |
| Type | Chip |
| Peak Photo Sensitivity | 0.62A/W |
| Вес, г | 0.089 |
