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BPW17N, Фототранзистор 1,8мм/450-1040нм/ прозрачный/12°
Оптоэлектроника / ИК/УФ-приборы и фотоприёмники / ФототранзисторыФототранзистор 1,8мм/450-1040нм/прозрачный/12°
| Base Product Number | BPW17 -> |
| Current - Collector (Ic) (Max) | 1mA |
| Current - Dark (Id) (Max) | 200nA |
| ECCN | EAR99 |
| HTSUS | 8541.40.7080 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -40В°C ~ 100В°C (TA) |
| Orientation | Top View |
| Package | Bulk |
| Package / Case | Radial |
| Power - Max | 100mW |
| RoHS Status | ROHS3 Compliant |
| Viewing Angle | 24В° |
| Voltage - Collector Emitter Breakdown (Max) | 32V |
| Wavelength | 825nm |
| Automotive | No |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Fabrication Technology | NPN Transistor |
| Half Intensity Angle Degrees (°) | 24 |
| Lens Color | Water Clear |
| Lens Shape Type | Domed |
| Material | Silicon |
| Maximum Collector Current (mA) | 50 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3 |
| Maximum Collector-Emitter Voltage (V) | 32 |
| Maximum Dark Current (nA) | 200 |
| Maximum Emitter-Collector Voltage (V) | 5 |
| Maximum Light Current (uA) | 1000(Typ) |
| Maximum Operating Temperature (°C) | 100 |
| Maximum Power Dissipation (mW) | 100 |
| Mounting | Through Hole |
| Number of Channels per Chip | 1 |
| Part Status | Active |
| PCB changed | 2 |
| Peak Wavelength (nm) | 825 |
| Phototransistor Type | Phototransistor |
| Pin Count | 2 |
| Polarity | NPN |
| PPAP | No |
| Standard Package Name | T-3/4 |
| Supplier Package | T-3/4 |
| Type | Chip |
| Viewing Orientation | Top View |
| кол-во в упаковке | 1000 |
| Number of Channels | 1 |
| Typical Fall Time | 5µs |
| Typical Rise Time | 4.8µs |
| Wavelength Typ | 825nm; Viewing Angle |
| Вес, г | 0.1 |
