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По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
BPW85B
Электроэлемент Описание Фототранзистор, 3мм, -p макс: 850нм, 70В, 50°, Линза: прозрачная
| Wavelength Typ | 850nm; Viewing Angle |
| Base Product Number | BPW85 -> |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Dark (Id) (Max) | 200nA |
| ECCN | EAR99 |
| HTSUS | 8541.40.7080 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -40В°C ~ 100В°C (TA) |
| Orientation | Top View |
| Package | Bulk |
| Package / Case | Radial |
| Power - Max | 100mW |
| RoHS Status | ROHS3 Compliant |
| Viewing Angle | 50В° |
| Voltage - Collector Emitter Breakdown (Max) | 70V |
| Wavelength | 850nm |
| Automotive | No |
| Diameter | 3.4 |
| ECCN (US) | EAR99 |
| Fabrication Technology | NPN Transistor |
| Half Intensity Angle Degrees (°) | 50 |
| Lead Shape | Through Hole |
| Lens Color | Clear |
| Lens Shape Type | Domed |
| Material | Silicon |
| Maximum Collector Current (mA) | 50 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3 |
| Maximum Collector-Emitter Voltage (V) | 70 |
| Maximum Dark Current (nA) | 200 |
| Maximum Emitter-Collector Voltage (V) | 5 |
| Maximum Light Current (uA) | 4000 |
| Maximum Operating Temperature (°C) | 100 |
| Maximum Power Dissipation (mW) | 100 |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Through Hole |
| Number of Channels per Chip | 1 |
| Packaging | Bulk |
| Part Status | Active |
| PCB changed | 2 |
| Peak Wavelength (nm) | 850 |
| Phototransistor Type | Phototransistor |
| Pin Count | 2 |
| Polarity | NPN |
| PPAP | No |
| Supplier Package | T-1 |
| Type | Chip |
| Viewing Orientation | Top View |
| Angle of Half Sensitivity | 50 ° |
| Collector Current | 50mA |
| Maximum Dark Current | 200nA |
| Maximum Light Current | 4000µA |
| Maximum Wavelength Detected | 1080nm |
| Minimum Wavelength Detected | 450nm |
| Number of Channels | 1 |
| Number of Pins | 2 |
| Package Type | 3mm(T-1) |
| Spectral Range of Sensitivity | 450 → 1080 nm |
| Spectrums Detected | Infrared, Visible Light |
| Typical Fall Time | 2.3µs |
| Typical Rise Time | 2µs |
| Width | 3.4mm |
| Вес, г | 0.138 |
