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Цена по запросу
BPX 65, Photodiodes Silicon PIN Photodiode
Sensors\Optical Sensors\PhotodiodesPhotodiode PIN Chip 850nm 0.55A/W Sensitivity 2-Pin TO-18
| Длина Волны Предельной Чувствительности | 850нм |
| Количество Выводов | 2вывод(-ов) |
| Максимальная Рабочая Температура | 125°C |
| Минимальная Рабочая Температура | -40°C |
| Стиль Корпуса Диода | TO-18 |
| Темновой Ток | 1000пА |
| Угол Приема ± | 40° |
| Automotive | No |
| Diameter | 5.6(Max) |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Through Hole |
| Lens Type | Flat Glass |
| Maximum Dark Current (nA) | 5 |
| Maximum Fall Time (ns) | 12 |
| Maximum Forward Voltage (V) | 1.3 |
| Maximum Operating Temperature (°C) | 125 |
| Maximum Power Dissipation (mW) | 250 |
| Maximum Reverse Voltage (V) | 50 |
| Maximum Rise Time (ns) | 12 |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Through Hole |
| Part Status | Active |
| PCB changed | 2 |
| Peak Wavelength (nm) | 850 |
| Photo Sensitivity | 0.55A/W |
| Photodiode Material | Si |
| Photodiode Type | PIN |
| Pin Count | 2 |
| Polarity | Forward |
| PPAP | No |
| Standard Package Name | TO |
| Supplier Package | TO-18 |
| Type | Chip |
| Amplifier Function | No |
| Diode Material | Si |
| Maximum Wavelength Detected | 1100nm |
| Minimum Wavelength Detected | 350nm |
| Mounting Type | Through Hole |
| Number of Pins | 2 |
| Package Type | TO-18 |
| Peak Photo Sensitivity | 0.55A/W |
| Spectrums Detected | Infrared, Ultraviolet, Visible Light |
| Wavelength of Peak Sensitivity | 850nm |
| Width | 5.6mm |
| Short Circuit Current | 10µA |
| Typical Fall Time | 0.012µs |
| Typical Rise Time | 0.012µs |
| Вес, г | 0.718 |
