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По сертификату
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Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
BS250P, Диод специализированный TO-92-3
Транзисторы Описание Диод специализированный TO-92-3 Характеристики
Категория
Транзистор
Тип
полевой
Вид
MOSFET
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 230 mA |
| Maximum Drain Source Resistance | 14 Ω |
| Maximum Drain Source Voltage | 45 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 700 mW |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | E-Line |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Width | 2.41mm |
| Brand | Diodes Incorporated |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 4000 |
| Id - Continuous Drain Current | 230 mA |
| Manufacturer | Diodes Incorporated |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-92-3 |
| Packaging | Bulk |
| Pd - Power Dissipation | 700 mW |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Product | MOSFET Small Signal |
| Rds On - Drain-Source Resistance | 14 Ohms |
| Series | BS250 |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Type | FET |
| Vds - Drain-Source Breakdown Voltage | 45 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 3.5 V |
| Вес, г | 0.3 |
