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BSC014N06NS, Транзистор N-МОП, полевой, 60В, 100А, 156Вт, PG-TDSON-8 FL

OptiMOS™ 5 Power MOSFETs Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower R DS(on) and Figure of Merit (R DS(on) x Q g ) compared to alternative devices. They are designed using silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom, and client applications in the computing industry. They can also be used in synchronous rectification in switched-mode power supplies (SMPS) and motor control, solar microinverters, and fast switching DC/DC converter applications.

Brand	Infineon Technologies
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	5000
Fall Time	11 ns
Forward Transconductance - Min	75 S
Id - Continuous Drain Current	100 A
Manufacturer	Infineon
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	TDSON-8
Part # Aliases	BSC14N6NSXT SP000924886 BSC014N06NSATMA1
Pd - Power Dissipation	156 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	89 nC
Rds On - Drain-Source Resistance	1.45 mOhms
Rise Time	10 ns
Series	OptiMOS 5
Subcategory	MOSFETs
Technology	Si
Tradename	OptiMOS
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	43 ns
Typical Turn-On Delay Time	23 ns
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	2.1 V
Packaging	Reel
Part # Aliases	BSC014N06NSATMA1 BSC014N06NSXT SP000924886
RoHS	Details
Series	BSC014N06
VendorNumber	6383
Вес, г	0.5