Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
BSC050N03LS G, N Канал, 80 А, 30 В, 4.2 мОм, 10 В, 1
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 5000 |
| Fall Time | 3.6 ns |
| Forward Transconductance - Min | 38 S |
| Id - Continuous Drain Current | 80 A |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package/Case | TDSON-8 |
| Part # Aliases | SP000269785 BSC5N3LSGXT BSC050N03LSGATMA1 |
| Pd - Power Dissipation | 50 W |
| Product Category | MOSFETs |
| Product Type | MOSFETs |
| Qg - Gate Charge | 26 nC |
| Rds On - Drain-Source Resistance | 5 mOhms |
| Rise Time | 4 ns |
| Subcategory | Transistors |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 21 ns |
| Typical Turn-On Delay Time | 5.2 ns |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Вес, г | 0.1 |
