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BSC098N10NS5ATMA1, MOSFETs Pwr transistor 100V OptiMOS 5

UnclassifiedThe Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’.

Transistor Polarity	N Channel; Continuous Drain Current Id
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	60 A
Maximum Drain Source Resistance	0.0098 Ω
Maximum Drain Source Voltage	100 V
Maximum Gate Threshold Voltage	3.8V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SuperSO8 5x6
Pin Count	8
Series	OptiMOSTM5
Transistor Material	Silicon
Current - Continuous Drain (Id) @ 25°C	60A(Tc)
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2100 pF @ 50 V
Operating Temperature	-55°C ~ 150°C(TJ)
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.5W(Ta), 69W(Tc)
Rds On (Max) @ Id, Vgs	9.8mOhm @ 30A, 10V
Supplier Device Package	PG-TDSON-8-7
Technology	MOSFET(Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.8V @ 36µA
Вес, г	0.156