Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
BSC123N08NS3G, Диод выпрямительный PG-TDSON-8
Описание Диод выпрямительный PG-TDSON-8
| Корпус | PG-TDSON-8 |
| Вид | N-MOSFET |
| Монтаж | SMD |
| Мощность, Вт | 66 |
| Напряжение сток-исток, В | 80 |
| Сопротивление в открытом состоянии, Ом | 0.0123 |
| Тип | полевой |
| Ток стока, А | 55 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 55 A |
| Maximum Drain Source Resistance | 24 mΩ |
| Maximum Drain Source Voltage | 80 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 66 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | TDSON |
| Pin Count | 8 |
| Series | OptiMOS 3 |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V |
| Width | 6.1mm |
| Brand | Infineon Technologies |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 5000 |
| Fall Time | 4 ns |
| Forward Transconductance - Min | 22 S |
| Id - Continuous Drain Current | 55 A |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TDSON-8 |
| Part # Aliases | BSC123N8NS3GXT SP000443916 BSC123N08NS3GATMA1 |
| Pd - Power Dissipation | 66 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 25 nC |
| Rds On - Drain-Source Resistance | 10.3 mOhms |
| Rise Time | 18 ns |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 19 ns |
| Typical Turn-On Delay Time | 12 ns |
| Vds - Drain-Source Breakdown Voltage | 80 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Transistor Polarity | N Channel; Continuous Drain Current Id |
| Configuration | 1 N-Channel |
| Factory Pack Quantity | 5000 |
| Height | 1.27 mm |
| Length | 5.9 mm |
| Packaging | Reel |
| Part # Aliases | BSC123N08NS3GATMA1 BSC123N08NS3GXT SP000443916 |
| RoHS | Details |
| Vgs - Gate-Source Voltage | 20 V |
| Transistor Material | Si |
| Вес, г | 0.172 |
