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BSH103,215

Semiconductors\Discrete Semiconductors Описание Транзистор N-MOSFET, полевой, 30В, 850мА, 500мВт, SOT23 Характеристики Категория Транзистор Тип полевой Вид MOSFET

Категория	Транзистор
Тип	полевой
Вид	MOSFET
Base Product Number	BSH103 ->
Current - Continuous Drain (Id) @ 25В°C	850mA (Ta)
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On, Min Rds On)	2.5V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.1nC @ 4.5V
HTSUS	8541.21.0095
Input Capacitance (Ciss) (Max) @ Vds	83pF @ 24V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max)	540mW (Ta)
Rds On (Max) @ Id, Vgs	400mOhm @ 500mA, 4.5V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±8V
Vgs(th) (Max) @ Id	400mV @ 1mA (Min)
Continuous Drain Current (Id) @ 25В°C	850mA(Ts=80В°C)
Power Dissipation-Max (Ta=25В°C)	500mW(Ts=80В°C)
Rds On - Drain-Source Resistance	500mО© @ 500mA,2.5V
Transistor Polarity	N Channel
Vds - Drain-Source Breakdown Voltage	30V
Vgs - Gate-Source Voltage	400mV @ 1mAпј€Minпј‰
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	850 mA
Maximum Drain Source Resistance	400 mΩ
Maximum Drain Source Voltage	30 V
Maximum Gate Source Voltage	-8 V, +8 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	500 mW
Minimum Gate Threshold Voltage	0.4V
Minimum Operating Temperature	-55 °C
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	2.1 nC @ 4.5 V
Width	1.4mm