Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
BSM25GD120DN2, IGBT Modules 1200V 25A FL BRIDGE
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Collector-Emitter Saturation Voltage | 2.5 V |
| Configuration | Full Bridge |
| Continuous Collector Current at 25 C | 35 A |
| Factory Pack Quantity: Factory Pack Quantity | 10 |
| Gate-Emitter Leakage Current | 180 nA |
| Manufacturer | Infineon |
| Maximum Gate Emitter Voltage | 20 V |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Chassis Mount |
| Package / Case | EconoPACK 2A |
| Packaging | Tray |
| Part # Aliases | SP000100370 BSM25GD120DN2BOSA1 |
| Pd - Power Dissipation | 200 W |
| Product Category | IGBT Modules |
| Product Type | IGBT Modules |
| Product | IGBT Silicon Modules |
| Subcategory | IGBTs |
| Technology | Si |
| Вес, г | 180 |
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