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Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
BSN20-7, Транзистор: N-MOSFET, полевой, 50В, 0,3А, 0,6Вт, SOT23
Power MOSFETs
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 0.5 |
| Maximum Drain Source Resistance (mOhm) | 1800@10V |
| Maximum Drain Source Voltage (V) | 50 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 600 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Small Signal |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| Supplier Temperature Grade | Automotive |
| Typical Fall Time (ns) | 7.01 |
| Typical Gate Charge @ 10V (nC) | 0.8 |
| Typical Gate Charge @ Vgs (nC) | 0.8@10V |
| Typical Input Capacitance @ Vds (pF) | 21.8@10V |
| Typical Rise Time (ns) | 2.99 |
| Typical Turn-Off Delay Time (ns) | 9.45 |
| Typical Turn-On Delay Time (ns) | 2.93 |
| Maximum Continuous Drain Current | 500 mA |
| Maximum Drain Source Resistance | 2 Ω |
| Maximum Drain Source Voltage | 50 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 1.5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 920 mW |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Package Type | SOT-23 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 0.8 nC @ 10 V |
| Width | 1.4mm |
| Brand | Diodes Incorporated |
| Factory Pack Quantity: Factory Pack Quantity | 3000 |
| Fall Time | 8.3 ns |
| Id - Continuous Drain Current | 500 mA |
| Manufacturer | Diodes Incorporated |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Pd - Power Dissipation | 920 mW |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 800 pC |
| Rds On - Drain-Source Resistance | 1.8 Ohms |
| Rise Time | 2.99 ns |
| Series | BSN20 |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 9.45 ns |
| Typical Turn-On Delay Time | 2.93 ns |
| Vds - Drain-Source Breakdown Voltage | 50 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 400 mV |
| Lead Finish | Matte Tin |
| Max Processing Temp | 260 |
| Operating Temperature | -55 to 150 °C |
| RDS-on | 1800@10V mOhm |
| Typical Fall Time | 7.01 ns |
| Typical Rise Time | 2.99 ns |
| Вес, г | 0.05 |
