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Цена по запросу
BSS123-7-F, Транзистор полевой MOSFET N-канальный 100В 170мА, 0,3Вт
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторыТранзистор полевой MOSFET N-канальный 100В 170мА, 0,3Вт
| Корпус | sot-23 |
| Brand | Diodes Incorporated |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Fall Time | 8 ns |
| Forward Transconductance - Min | 0.08 S |
| Id - Continuous Drain Current | 170 mA |
| Manufacturer | Diodes Incorporated |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number Of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Packaging | Cut Tape or Reel |
| Pd - Power Dissipation | 300 mW |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Rds On - Drain-Source Resistance | 6 Ohms |
| Rise Time | 8 ns |
| Series | BSS123 |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | Enhancement Mode Field Effect Transistor |
| Typical Turn-Off Delay Time | 13 ns |
| Typical Turn-On Delay Time | 8 ns |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Voltage | 20 V |
| Channel Type | N |
| Maximum Continuous Drain Current | 170 mA |
| Maximum Drain Source Resistance | 10 Ω |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 300 mW |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Width | 1.4mm |
| Factory Pack Quantity: Factory Pack Quantity | 3000 |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 800 mV |
| Вес, г | 0.03 |
