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Цена по запросу
BSS127H6327XTSA2, Транзистор полевой MOSFET N-канальный 600В 0.021А 0.5Вт
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторыТранзистор полевой MOSFET N-канальный 600В 0.021А 0.5Вт
| Корпус | sot-23 |
| Continuous Drain Current (Id) @ 25В°C | 21mA |
| Power Dissipation-Max (Ta=25В°C) | 500mW |
| Rds On - Drain-Source Resistance | 500О© @ 16mA,10V |
| Transistor Polarity | N Channel |
| Vds - Drain-Source Breakdown Voltage | 600V |
| Vgs - Gate-Source Voltage | 2.6V @ 8uA |
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 3000 |
| Fall Time | 115 ns |
| Forward Transconductance - Min | 7 mS |
| Id - Continuous Drain Current | 21 mA |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Part # Aliases | BSS127H6327XT SP000919332 BSS127H6327XTSA2 |
| Pd - Power Dissipation | 500 mW |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Product | MOSFET Small Signal |
| Qg - Gate Charge | 650 pC |
| Qualification | AEC-Q101 |
| Rds On - Drain-Source Resistance | 310 Ohms |
| Rise Time | 9.7 ns |
| Series | BSS127 |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 14 ns |
| Typical Turn-On Delay Time | 6.1 ns |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Вид | N-MOSFET |
| Монтаж | SMD |
| Мощность, Вт | 0.5 |
| Напряжение сток-исток, В | 600 |
| Сопротивление в открытом состоянии, Ом | 500 |
| Тип | полевой |
| Ток стока, А | 0.021 |
| Вес, г | 0.05 |
