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BSS306NH6327XTSA1, транзистор, Trans MOSFET N-CH 30V 2.3A Automotive 3-Pin SOT-23 T/R
Small Signal Power MOSFETs
Infineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101.
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Brand | Infineon Technologies |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity: Factory Pack Quantity | 9000 |
Fall Time | 1.4 ns |
Forward Transconductance - Min | 5 S |
Id - Continuous Drain Current | 2.3 A |
Manufacturer | Infineon |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package/Case | SOT-23-3 |
Part # Aliases | BSS306N H6327 SP000928940 |
Pd - Power Dissipation | 500 mW |
Product Category | MOSFET |
Product Type | MOSFET |
Qg - Gate Charge | 1.5 nC |
Qualification | AEC-Q101 |
Rds On - Drain-Source Resistance | 57 mOhms |
Rise Time | 2.3 ns |
Series | BSS306 |
Subcategory | MOSFETs |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 8.3 ns |
Typical Turn-On Delay Time | 4.4 ns |
Vds - Drain-Source Breakdown Voltage | 30 V |
Vgs - Gate-Source Voltage | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage | 1.6 V |
Вес, г | 0.034 |