Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
BSS84DW-7-F, Транзистор: P-MOSFET x2, полевой, -50В, -0,13А, 0,3Вт, SOT363
Диоды Описание Транзистор: P-MOSFET x2, полевой, -50В, -0,13А, 0,3Вт, SOT363 Характеристики
Категория
Диод
| Категория | Диод |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Product Category | Small Signal |
| Configuration | Dual |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage (V) | 50 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 0.13 |
| Maximum Drain Source Resistance (mOhm) | 10000@5V |
| Typical Input Capacitance @ Vds (pF) | 45(Max)@25V |
| Maximum Power Dissipation (mW) | 300 |
| Typical Turn-Off Delay Time (ns) | 18 |
| Typical Turn-On Delay Time (ns) | 10 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Supplier Temperature Grade | Commercial |
| Packaging | Tape and Reel |
| Automotive | Yes |
| AEC Qualified Number | AEC-Q101 |
| Pin Count | 6 |
| Standard Package Name | SOT |
| Supplier Package | SOT-363 |
| Military | No |
| Mounting | Surface Mount |
| Package Height | 1 |
| Package Length | 2.15 |
| Package Width | 1.3 |
| PCB changed | 6 |
| Lead Shape | Gull-wing |
| Brand | Diodes Incorporated |
| Factory Pack Quantity: Factory Pack Quantity | 3000 |
| Forward Transconductance - Min | 0.05 S |
| Id - Continuous Drain Current | 130 mA |
| Manufacturer | Diodes Incorporated |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | SOT-363-6 |
| Pd - Power Dissipation | 300 mW |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Product | MOSFET Small Signal |
| Rds On - Drain-Source Resistance | 10 Ohms |
| Series | BSS84 |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Transistor Type | 2 P-Channel |
| Type | Enhancement Mode Field Effect Transistor |
| Typical Turn-Off Delay Time | 18 ns |
| Typical Turn-On Delay Time | 10 ns |
| Vds - Drain-Source Breakdown Voltage | 50 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 800 mV |
| Вес, г | 0.01 |
Похожие товары
Цена по запросу
