Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
BSS87H6327FTSA1, Транзистор
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families.
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | 1 N-Channel |
| Factory Pack Quantity | 1000 |
| Fall Time | 27.3 ns |
| Forward Transconductance - Min | 160 mS |
| Height | 1.5 mm |
| Id - Continuous Drain Current | 260 mA |
| Length | 4.5 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-89-3 |
| Packaging | Reel |
| Part # Aliases | BSS87 H6327 SP001047646 |
| Pd - Power Dissipation | 1 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 5.5 nC |
| Rds On - Drain-Source Resistance | 3.9 Ohms |
| Rise Time | 3.5 ns |
| RoHS | Details |
| Series | BSS87 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 17.6 ns |
| Typical Turn-On Delay Time | 3.7 ns |
| Vds - Drain-Source Breakdown Voltage | 240 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 800 mV |
| Width | 2.5 mm |
| Вес, г | 0.008 |
