Как мы работаем

По сертификату
"военный регистр"

Только с Юр. Лицами,
мелкий и крупный опт

Цена по запросу

BSZ025N04LS, Транзистор

OptiMOS™ 5 Power MOSFETs Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower R DS(on) and Figure of Merit (R DS(on) x Q g ) compared to alternative devices. They are designed using silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom, and client applications in the computing industry. They can also be used in synchronous rectification in switched-mode power supplies (SMPS) and motor control, solar microinverters, and fast switching DC/DC converter applications.

Brand	Infineon Technologies
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	5000
Fall Time	5 ns
Forward Transconductance - Min	55 S
Id - Continuous Drain Current	40 A
Manufacturer	Infineon
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	TSDSON-8
Part # Aliases	SP001252032 BSZ025N04LSATMA1
Pd - Power Dissipation	69 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	37 nC
Rds On - Drain-Source Resistance	2.4 mOhms
Rise Time	7 ns
Series	OptiMOS 5
Subcategory	MOSFETs
Technology	Si
Tradename	OptiMOS
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	27 ns
Typical Turn-On Delay Time	6 ns
Vds - Drain-Source Breakdown Voltage	40 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	2 V
Вес, г	0.0368