Цена по запросу
BT168G,112, Тиристор; 600В; Ifмакс: 0,8А; Igt: 200мкА; TO92; THT; Ifsm: 8А
Диоды Описание Тиристор; 600В; Ifмакс: 0,8А; Igt: 200мкА; TO92; THT; Ifsm: 8А
| Brand | WeEn Semiconductors |
| Breakover Current IBO Max | 9 A |
| Current Rating | 500 mA |
| Factory Pack Quantity: Factory Pack Quantity | 5000 |
| Gate Trigger Current - Igt | 50 uA |
| Gate Trigger Voltage - Vgt | 0.5 V |
| Holding Current Ih Max | 2 mA |
| Manufacturer | WeEn Semiconductors |
| Maximum Gate Peak Inverse Voltage | 5 V |
| Maximum Operating Temperature | +125 C |
| Mounting Style | Through Hole |
| Non Repetitive On-State Current | 8 A |
| Off-State Leakage Current @ VDRM IDRM | 50 uA |
| On-State RMS Current - It RMS | 800 mA |
| Package / Case | SOT-54-3 |
| Part # Aliases | 934042490112 |
| Product Category | SCRs |
| Product Type | SCRs |
| Rated Repetitive Off-State Voltage VDRM | 600 V |
| Subcategory | Thyristors |
| Type | SCR |
| Вес, г | 0.35 |