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BTS282ZE3180AATMA2, МОП-Транзистор 49 В 80 А 6,5 мОм при 36 А, 10 В 300 Вт N-канальные МОП-Транзистор TO-263-7-0

Transistors/Thyristors\MOSFETs\Transistors/Thyristors\MOSFETs

Continuous Drain Current (Id)	80A
Drain Source On Resistance (RDS(on)@Vgs,Id)	6.5mΩ@36A, 10V
Drain Source Voltage (Vdss)	49V
Gate Threshold Voltage (Vgs(th)@Id)	2V@240uA
Input Capacitance (Ciss@Vds)	4.8nF@25V
Power Dissipation (Pd)	300W
Total Gate Charge (Qg@Vgs)	232nC@10V
Automotive	Yes
Channel Mode	Enhancement
Channel Type	N
Configuration	Single Triple Source
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
HTS	COMPONENTS
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	80
Maximum Drain Source Resistance (MOhm)	6.5@10V
Maximum Drain Source Voltage (V)	49
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2
Maximum IDSS (uA)	1
Maximum Operating Temperature (°C)	175
Maximum Power Dissipation (mW)	300000
Minimum Operating Temperature (°C)	-40
Mounting	Surface Mount
Number of Elements per Chip	1
Package Height	4.4
Package Length	10
Package Width	9.25
Packaging	Tape and Reel
Part Status	LTB
PCB changed	7
Pin Count	8
PPAP	Unknown
Product Category	Power MOSFET
Standard Package Name	TO-263
Supplier Package	D2PAK
Supplier Temperature Grade	Automotive
SVHC	Yes
SVHC Exceeds Threshold	Yes
Tab	Tab
Typical Fall Time (ns)	36
Typical Gate Charge @ 10V (nC)	155
Typical Gate Charge @ Vgs (nC)	155@10V
Typical Input Capacitance @ Vds (pF)	3850@25V
Typical Rise Time (ns)	37
Typical Turn-Off Delay Time (ns)	70
Typical Turn-On Delay Time (ns)	30
Вес, г	0.3